Phase change memory cell with an upper amorphous nitride silicon germanium heating layer

The advanced phase change memory (PCM) cell with an amorphous nitride silicon germanium (SiGexNy) upper heating layer was fabricated. Applying a proper height of reset voltage pulse to the cell, the amorphous SiGexNy heating layer was crystallized along with the melt of the Ge1Sb2Te4 layer. Then the SiGexNy heating layer preserved its crystalline state during the successive programming cycles. With this crystalline SiGexNy heating layer, the set and reset threshold voltage values were reduced, which enhanced the heat efficiency and decreased the power consumption of the PCM cell. Meanwhile, the PCM cell showed good endurance characteristics.