The size‐quantum effect of the energy of a charged carrier in a spherical semiconductor crystallite embedded in another spherical dielectric layer is discussed and the interaction of the charged carrier with surface optical (SO) and longitudinal optical (LO) vibrations is taken into account. In the first‐order approximation of the energy the charged carrier does not interact with SO vibrations, and it interacts only with LO vibration of the dielectric in which the charged carrier is located. The interaction energy between the charged carrier and LO vibrations will increase with decreasing the size of crystallite.
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Pan et al. (1988) studied this question.
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