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Although semiconductor nanostructures exhibit improved physical properties, their structural instability is be a problem for technological applications. This paper reports a temperature-induced low energy phase transformation that occurs in CdS nanoparticles which is ascribed to thermally generated stacking-faults. The phase transformation is found to change the nature of lattice strain in the samples. The formation of this defect-induced lattice strain and its influence on the physical properties of the samples are investigated. The modified optical absorption and emission properties of the samples are thoroughly studied. Using resonance Raman spectroscopy, the evolution of electron-phonon (e-p) coupling strength with structural changes is studied. An explanation to the contradictory nature of e-p coupling strength observed in the nano-regime is given.
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Chandran et al. (2014) studied this question.
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