The Preparation and Properties of Large, Solution Grown GaP Crystals

A method of growing large crystals of from solution, similiar to that of Broder and Wolff in which a zone of liquid gallium saturated with is passed upward through a ingot, is investigated. With this method, all the advantages of a solution growth process are retained, i.e. , low temperature, and therefore low phosphorus pressure, and minimum contamination from container materials. In order to grow large crystals it was found necessary to initiate growth on a twinned seed crystal, with all of the twin planes parallel, and parallel to a 〈211〉 growth direction. The effect of repeated zone passes through the same ingot on the purity and electrical properties is presented.