Enhanced photoluminescence from porous silicon by hydrogen-plasma etching

Porous silicon (PS) was etched by hydrogen plasma. On the surface a large number of silicon nanocone arrays and nanocrystallites were formed. It is found that the photoluminescence of the H-etched porous silicon is highly enhanced. Correspondingly, three emission centers including red, green, and blue emissions are shown to contribute to the enhanced photoluminescence of the H-etched PS, which originate from the recombination of trapped electrons with free holes due to SiO bonding at the surface of the silicon nanocrystallites, the quantum size confinement effect, and oxygen vacancy in the surface SiO2 layer, respectively. In particular, the increase of SiOx(x<2) formed on the surface of the H-etched porous silicon plays a very important role in enhancing the photoluminescence properties.