Dead‐layer effect in silicon detectors: yield spectra of reflected electrons

Knowledge of the exact energy deposited of keV and sub‐keV electron in solid‐state detectors with a dead layer depends strongly on the fraction of electrons backscattered and implanted. A new Monte Carlo (MC) simulation approach has been developed to describe electron scattering processes from silicon. In the present study, we show results concerning yield spectra of backscattered electrons. Backscattered fractions of primary, secondary and total yields are presented together with their energy spectra. Experimental databases of D. C. Joy and original experimental measurements recently made by K. Goto are used for comparison. Good agreement has been found suggesting the use of the present MC code to simulate a solid state silicon detector for low electron energies.