Auger electron from silicon: comparison of full Monte Carlo simulations with experiment

A Monte Carlo simulation approach has been developed to describe electron scattering processes from silicon in the keV and sub‐keV electron energy range. Ionizations, excitations, secondary electron production, relaxation and auger emissions are considered during the simulations. In the present study, we show results concerning K and L Auger electrons. Good agreement has been found when comparing our theoretical calculations and original experimental measurements recently made by Goto et al .