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March 15, 1996Journal of Applied Physics

Cathodoluminescence study on dislocations in silicon

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Authors

TSTakashi SekiguchiUniversity of TsukubaKSKôji SuminoNippon Steel (Japan)

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Sekiguchi et al. (1996) studied this question.

synapsesocial.com/papers/6a93eb9e235a0bf22c92c968https://doi.org/10.1063/1.361271
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Also Consider

Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Dependence of Photoluminescence on Temperature in Dislocated Silicon Crystals1983 · 93 citations
  2. 230° Partial Dislocations in Silicon: Absence of Electrically Active States1982 · 52 citations
  3. 3Quantitative electron-beam tester for defects in semiconductors (CL/EBIC/SDLTS system)1995 · 107 citations
  4. 4Electron states below the conduction band in Germanium originating from dissociated 60°‐dislocations1978 · 24 citations