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It is shown that the resistance of three-dimensional metallic n InSb below 100 mK can be explained by the effects of the anomalous correction due to Coulomb interactions. A clear comparison of the experiment with the theory is made possible by resistance measurements over a wide range of the carrier concentration. The theoretical results show better agreement with the experimental ones in metallic n-InSb than those in metallic Si-P.
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Morita et al. (1982) studied this question.
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