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A method is described for preparing lateral Ni-GaAs diffusion couples for transmission electron microscopy (TEM) investigations. The diffusion couples are annealed in situ in a TEM using a hot stage. The growth of a ternary phase has been observed, and shows parabolic time dependence of the growth. At 200–300 °C, Ni is the predominant diffusion species while Ga and As are essentially immobile. The experimental results are compared with previous investigations of the reactions of Ni thin films with bulk GaAs.
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Chen et al. (1986) studied this question.
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