A semi-insulating InP buried structure is applied to a uni-travelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ~ 120 mW (23.5 mA × 5 V), a responsivity of 0.7 A/W, and a bandwidth of 47 GHz.
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Yuda et al. (1999) studied this question.
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