An abrupt pulse-doped InP/GaInAs/InP double heterojunction bipolar transistor having a 0.45--wide T-shaped emitter metal is reported. These two promising technologies for sub-100-nm emitters were previously demonstrated only for 1-emitters. The device exhibited typical dc and microwave performance to 0.5-emitter devices.
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Cohen-Elias et al. (2008) studied this question.
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