Answers are grounded in this paper and cite their sources.
An indium phosphide heterojunction bipolar transistor (InP HBT) oscillator chip was monolithically integrated with an on chip p-i-n photodiode. A controllable locking range was obtained in unidirectional injection locking. High-purity optoelectronic oscillator with parasitic modes lower than -4 dBc resulted from bidirectional injection locking. The optoelectronic oscillator power consumption was 50 mW while providing output power of - 2 dBm . The overall chip size is 1.3 times 0.8 mm.
No takes yet. Share an insight, caveat, or question.
Shumakher et al. (2008) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: