Field-theoretic analysis of wave propagation on FET electrodes including losses and small-signal amplification

A wave-theoretic analysis of MESFET electrode structures is presented where for the first time both the losses caused by the semiconductor layer and those caused by the finite conductivity of the electrodes are taken into consideration. The active properties of the transistor are modelled by adopting a suitable small-signal theory. The results are discussed by taking as an example a TW FET design, although they are equally relevant for all standard microwave MESFETs.