The effect of Zn-annealing of an excessively In-doped ZnSe crystal (In ≈100 ppm) and of an as-grown ZnSe crystal on the electrical transport properties is investigated in the temperature range 300 to 77 K. The excessive doping of ZnSe with In results in an increase in the compensation effects in ZnSe which are removed to some extent by Zn-annealing of the In-doped sample. The possible mechanism involved in the compensating effect due to the excessive In-doping of ZnSe crystal and role of Zn-annealing in removing these compensating effects are discussed.
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Sethi et al. (1978) studied this question.
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