The growth of large, high‐purity CdS monocrystal has been accomplished by a closed system technique. Crystals weighing up to 150g, 9 cm in length by 25 mm in diameter have been grown in a closed quartz ampoule directly from the high‐purity elemental constituents. The technique lends itself to the preparation of high‐purity CdS , since the possibility of extraneous impurity pick‐up is minimized. Homogeneous doping during vapor growth has also been accomplished. In addition, techniques are described whereby bulk crystals containing 10 3 dislocation/cm 2 have been prepared. The mechanisms of dislocation production, propagation, and removal are discussed in the specific context of constrained growth from the vapor phase.
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Hemmat et al. (1967) studied this question.