A low‐loss planar goubau line and a coplanar‐PGL transition on high‐resistivity silicon substrate in the 57–64 GHz band

Planar Goubau line (PGL) structures on high‐resistivity silicon are adapted to the 57–64 GHz frequency band. Simulations and measurements show a lower attenuation than with the coplanar line is obtained. Very low losses are attained with a measured average attenuation of 0.064 dB/mm on the whole band. To allow this measurement, coplanar‐PGL transitions have been optimized.