The Problem of a Near Surface Quasi‐Gas Transition Layer in MBE

A survey of experimental data related to the problem of a near surface quasi‐gas (NSQG) transition layer in molecular beam epitaxy (MBE) has been presented and the arguments suggesting the existence of such a transition layer have been discussed. Subsequently, the application of the NSQG layer concept to morphological stability analyzis of MBE and to the phase‐locked MBE has been discussed. The experimental data presented suggest that in growing extremely flat layer structures, e.g., superlattice structures, a growth mode for MBE should be chosen in which the NSQG layer is maximally thin, however, when growing planar epilayers over patterned substrates such MBE growth mode should be chosen in which the creation of a thick (on an atomic scale) NSQG layer would be possible.