An investigation was made of the influence of various parameters such as temperature and income-gas-concentration on the alloy composition of epitaxial GaAs1−xPx deposited from the vapour phase. The calculations are based on thermodynamic data taken from a critical literature survey. It will be shown that both, seed temperature and HCl concentration strongly influence the alloy composition. An increase of the deposit temperature as well as a decrease of HCl in the gas phase result in an increase of phosphorous in the deposit.
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M. Bleicher (1973) studied this question.
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