Cesium adsorption on GaAs(110) has been studied by angle-resolved photoemission spectroscopy at room temperature in the submonolayer-coverage regime. We report the observation of a Cs-induced surface state in the vicinity of the surface-Brillouin-zone edge. The possible origin of the state is discussed in relation to recent structural observations. The onset of the Cs-induced surface state can be correlated with the appearance of a second Cs 5p core-level emission feature at {~}0.2 monolayer Cs coverage.
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Wong et al. (1990) studied this question.
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