Hydrogenated amorphous boron (a-B:H) films were deposited on Si crystal substrates using DC glow discharge in B2H6 diluted to 1000 ppm in H2. We found that the rate of the deposition was about two times higher for 10B-enriched B2H6 than for natural B2H6. The deposition process was observed by optical emission spectroscopy of the DC glow. BH emission lines at 433.2 nm and 369.4 nm were strongly enhanced in the 10B-enriched B2H6/H2 compared with the natural B2H6/H2. This manifests an isotopic effect on the deposition rate of the a-B:H film. Concentrations of 10B, 11B and 1H in the films were analyzed by SIMS. The hydrogen content of the films was found to be 3.9 × 1023 atoms/cm3 from the thermal hydrogen release measured by gas chromatography. The 10B-enriched film was applied to construct a novel silicon neutron detector. It showed a satisfactory sensitivity for neutron detection.
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Sato et al. (1990) studied this question.
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