The electronic properties of MNOS diodes consisting of vapor deposited Si 3 N 4 and thermally grown SiO 2 films are studied. The diodes exhibiting injection or ion drift type hysteresis are prepared using n - or p -type substrate. It is found that ion drift type MNOS diodes utilizing n -type substrate exhibits a new type of C-V and I-V characteristics, while the other kinds of diodes exhibit similar characteristics as those of MNS diodes. This new type of characteristics are interpreted in terms of single carrier (electron) transport while the other ones are interpreted in terms of electron and hole transport throughout the diodes. Combining these findings with the general concept of charge transport and storage (CTS) model, a two carrier CTS model which gives a qualitative but unified understanding of shift characteristics of flat band voltage as well as C-V and I-V curves associated with MNOS diodes is proposed.
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Kobayashi et al. (1972) studied this question.