Enhancement of the TiO[sub 2] Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate

Ti O 2 films were deposited via plasma-enhanced atomic layer deposition on an Ir electrode. The phase of the Ti O 2 films on the Ir electrode were changed from anatase to anatase and rutile multiphases with oxygen plasma time due to oxidation of Ir surface to Ir O 2 , resulting in the increase of dielectric constant (from 50 to 83). In order to improve the rutile crystallinity, Ir O 2 seed layer was formed by annealing at 600 ° C for 10 min in ambient oxygen before Ti O 2 films deposition. As a result, the rutile crystallinity of Ti O 2 films was enhanced and its dielectric constant increased to 90.