The Depth of Mechanical Damage in Gallium Arsenide

A technique for the determination of the depth of damage induced into the surface of doped n‐type gallium arsenide by sawing, grinding, and polishing is described. The infrared reflectivity in the 20–60μ region was used for this measurement. The relationship between the optical constants of GaAs and reflectivity is reviewed briefly. The extent of the damage is shown to be about equal to the diameter of the final grinding particles. The mechanical treatments produce defect states in the surface which serve as electron traps. This technique is not applicable in the study of p‐type or undoped material.