The inelastic mean free paths of 600–1000 eV Auger electrons have been determined in Cu and Ni films. Thin films of known thickness were produced by the vapor deposition of Cu on Ni substrates and vice versa. The strengths of the characteristic Auger signals of Cu and Ni were monitored as a function of film thickness. Values of the mean free paths are presented and compared to values previously published by other workers. By monitoring the strengths of the Auger signals from the condensate, it is concluded that backscattering factors for a Ni substrate carrying a Cu film are higher than the backscattering factors for a Cu substrate carrying a Ni film.
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Burke et al. (1982) studied this question.
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