We have studied the interface structure and the quality of molecular-beam-epitaxy grown AlSb/InAs/AlSb quantum wells through Raman scattering from interface vibrational modes from single quantum wells. A series of samples was grown by varying the growth temperature and the interface composition (by forcing either a light AlAs or a heavy InSb interface bond configuration at each InAs/AlSb interface). We have observed the InSb modes for all the samples and related the intensity and shape of the interface modes to the structure and quality of the interfaces. This work demonstrates that a single interface heterostructure can be probed by Raman scattering.
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Sela et al. (1992) studied this question.
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