Donor formation in heat-treated phosphorus-doped Czochralski-grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both ‘‘thermal-donor-’’ and ‘‘new-donor’’-formation temperature regions (470 and 650 °C, respectively) have been investigated. The results allow one to identify the spectra in both regions as arising from the Si-NL10 defect.
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Bekman et al. (1987) studied this question.
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