Edge-emitting short-cavity lasers with deeply-etched Bragg mirrors were fabricated on a GaInAs/AlGaAs laser structure with a single active layer of self-organised GaInAs quantum-dots. Continuous wave operation has been achieved down to cavity lengths of 16 µm with a minimum threshold current of 1.2 mA for 30 µm-long devices.
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Rennon et al. (2000) studied this question.
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