The interaction of oxygen with the clean cleaved (110) face of GaAs (n=3*10 16 cm -3 ) has been studied by Auger electron spectroscopy up to exposures of 10 7 Langmuir. The first stage of oxidation, characterised by an initial sticking coefficient ranging from 10 -3 to 10 -2 , is very much cleavage dependent; it is shown that the better the cleavage the lower the reactivity. Then, between roughly 10 4 and 10 5 Langmuir, a reproducible saturation is observed which corresponds to an absolute coverage of about half a monolayer. The kinetics governing this stage of oxidation corresponds either to an immobile oxygen layer and a non-activated process, or to a mobile layer and a thermally activated adsorption with an activation energy of approximately 0.17 eV independent of coverage. Oxidation proceeds beyond half a monolayer and the coverage dependence of the sticking coefficient is then described by an Elovich equation.
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Proix et al. (1980) studied this question.
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