Design and Modelling of Different SRAM'S Based on CNTFET 32NM Technology

Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure. Since it was first demonstrated in 1998, there have been tremendous developments in CNTFETs, which promise for an alternative material to replace silicon in future electronics. Carbon nanotubes are promising materials for the nano-scale electron devices such as nanotube FETs for ultra-high density integrated circuits and quantum-effect devices for novel intelligent circuits, which are expected to bring a breakthrough in the present silicon technology.