Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors

We demonstrate a nanopillar (NP) device structure for implementing plasmonically enhanced avalanche photodetector arrays with thin avalanche volumes (∼ 310 nm × 150 nm × 150 nm). A localized 3D electric field due to a core-shell PN junction in a NP acts as a multiplication region, while efficient light absorption takes place via surface plasmon polariton Bloch wave (SPP-BW) modes due to a self-aligned metal nanohole lattice. Avalanche gains of ∼216 at 730 nm at -12 V are obtained. We show through capacitance-voltage characterization, temperature-dependent breakdown measurements, and detailed device modeling that the avalanche region is on the order of the ionization path length, such that dead-space effects become significant. This work presents a clear path toward engineering dead space effects in thin 3D-confined multiplication regions for high performance avalanche detectors for applications in telecommunications, sensing and single photon detection.