Self-organized In0.4Ga0.6As/GaAs quantum-dot single-mode ridge waveguide lasers with intracavity absorber were grown by molecular beam epitaxy. Bistability in the light–current characteristics of 3 μm single-mode edge-emitting laser was obtained by controlling the intracavity absorber voltage. Self-pulsation was also observed with a center frequency of 1.6 GHz and linewidth <10 MHz.
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Qasaimeh et al. (1999) studied this question.
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