AlyGaxIn1−y−xAs structures were prepared by molecular beam epitaxy to determine both the electron effective mass and band-gap dependence of the InP lattice-matched alloy. Cyclotron resonance and photoluminescence measurements were used, respectively. The effective mass obtained after nonparabolicity correction is m*=0.0403+0.0817y. The band-gap relationships obtained at 300 and 5.5 K are Eg (eV)=0.752+1.453y, and Eg (eV)=0.792+1.530y, respectively.
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Kopf et al. (1992) studied this question.
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