We report the measurement of the optical absorption spectra of single quantum wells of GaAs (104 Å thick) and InGaAs (75 Å thick) by photothermal deflection spectroscopy. The room-temperature spectra show distinct structure due to heavy- and light-hole excitons in both GaAs and InGaAs samples. The measurements also show that absorption spectra in extremely thin (<10 Å) quantum wells, single heterostructures, or other microstructures with very small absorptance can be obtained by this technique.
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Penna et al. (1985) studied this question.
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