The transport properties of InAs/GaSb crossed-gap heterostructures are relatively complex because of the presence of nearly equal areal densities of electrons and holes at the interfaces. We have made a comprehensive study of the independent components of both the resistivity and thermopower tensors in the temperature range 0.3--5 K in perpendicular magnetic fields where semiclassical effects are dominant. It is shown that the results are best analyzed and understood in terms of the conductivity {σ} and thermoelectric {ε} tensors. The data are consistent with the assumption that the electron and hole gases make independent and additive contributions to {σ} and {ε}, and that these contributions are easily separated. The thermopower is dominated by phonon drag above {~}1 K, and the individual contributions of the electrons and holes are similar in temperature and field dependence to those observed in GaAs/Ga_1-x{Al}ₓ$As heterojunctions with only one carrier type present, though the absolute magnitudes are smaller. {} 1996 The American Physical Society.
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Cao et al. (1996) studied this question.