Very Low Interface State Density From Thermally Oxidized Single-Domain 3C–SiC/6H–SiC Grown by Vapour–Liquid–Solid Mechanism

The temperature- and frequency-dependent electrical properties of SiO 2 /3C–SiC/6H–SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C–SiC film is doped with an average concentration of 8.4 × 10 16 cm -3 . One nitrogen donor level and a shallow donor level were found. The measured interface state density near the conduction band edge of 3C–SiC is below 10 11 cm -2 eV -1 and increases towards mid-gap as obtained from conductance and capacitance measurements. Our results are consistent with the assumption that the interfaces of SiO 2 /n-type SiC consist of two different kinds of interface traps.