Low‐cost UHF‐band p‐i‐n diodes are used to develop high‐performance L‐band series and parallel switches. To stop the rectification of large RF signals, the diodes are biased at a large reverse‐bias voltage. Parasitic elements of the diodes are tuned out using LC circuits in biasing circuits without increasing the size of the switches.
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Karmakar et al. (2002) studied this question.
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