Se donors in doped n-type GaAs are passivated by exposure to a hydrogen plasma. The thermal reactivation of the passivated donors is investigated for the temperature range 154^∘{}C--191^∘{}C. By using the electric field of a reverse-biased Schottky-diode structure, the drift of the thermally dissociated hydrogen as a negatively charged species is demonstrated. The thermal dissociation of the SeH complex obeys first-order kinetics, with a dissociation energy ESeH=1.52±{}0.05 eV.
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Leitch et al. (1991) studied this question.
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