Charge-state-dependent hydrogen-carbon-related deep donor in crystalline silicon

The electronic properties of hydrogen in carbon-doped n-type silicon have been studied using deep-level transient spectroscopy. The results show for the first time that hydrogen in the presence of carbon forms a deep and charge-state-dependent center located {~}0.16 eV below the edge of the conduction band. This trap center is a deep donor which is only stable in the positively charged state and anneals after capture of electrons for temperatures T{≥}300 K.