MeV Be implantation in GaAs

High-energy Be implantation was performed at 1, 2, and 3 MeV for a dose of 1×1013 cm−2 and at 2 MeV in the dose range of 4×1012–1×1014 cm−2. Range statistics from as-implanted secondary ion mass spectrometry profiles were calculated. The implanted wafers were activated by either conventional furnace or rapid thermal annealing. For the same implant dose, 1×1013 cm−2, the dopant electrical activation decreased with increasing ion energy. For the 2-MeV implants, the dopant electrical activation increased with the implant dose, in the range used in this study. An activation as high as 98% was measured for the 2-MeV/1×1014-cm−2 Be implant.