Electrode band structure effects in thin MgO magnetic tunnel junctions

This is the authors' abstract. We don't add key points for this paper.

In this study, we demonstrate that, beyond the standard magnon excitations, the electronic band structure of the electrodes plays a significant role on the low bias voltage window (0 < |V| < 0.4 V) of the tunnel magnetoresistance (TMR) in thin MgO-CoFeB junctions. The tunneling conductance in the parallel state presents a minimum at about ±0.35 and ±0.3 V for the negative and positive bias, respectively. The presence of this minimum indicates a related decrease in the TMR(V). These observations are explained by the electronic band structures of bcc-Fe and Co.