Answers are grounded in this paper and cite their sources.
A four-state magnetic random access memory (MRAM) was developed using an epitaxial Co50Fe50-MgO-Co50Fe50magnetic tunnel junction (MTJ) with a tunnel magnetoresistance (TMR) ratio of 145% at room temperature (RT). Four remanent magnetization states in the single-crystalline Co50Fe50electrode, due to the cubic anisotropy with easy axes of the lang110rang directions, result in four possible angular-dependent TMRs, each separated by more than 20% at RT. Analysis of the asteroid curve for Co50Fe50indicated that the magnetic field along 22.5deg from the lang110rang directions made it possible to change the magnetization direction of the selected cell without disturbing those of the half-selected cells
No takes yet. Share an insight, caveat, or question.
Uemura et al. (2007) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: