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We report on terahertz (THz) surface impedance measurement of an epitaxial MgB2 thin film using time domain THz spectroscopy. We show that the surface resistance of the MgB2 film is much lower than that of YBa2Cu3O7−δ and copper in the THz range. A linear dependence of the surface reactance on frequency is observed, yielding a penetration depth of about 100nm at low temperatures. The measurements agree qualitatively with calculations based on impurity scattering in the Born limit. Our results clearly indicate that MgB2 thin films have a great potential for THz electronic applications.
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Jin et al. (2005) studied this question.
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