Behaviour of Primary Defects in Electron‐Irradiated Germanium

An investigation is made of the influence of the free electron and donor impurity concentrations on the annealing kinetics of the 35 and 65 °K stages and on the creation rate of the 35 °K stage, in low temperature electron irradiated n‐type Germanium, using As‐ or Sb‐doped samples, Ga and Cu compensated samples, and a Li‐doped sample. The results obtained allow to conclude that the mobility of the Ge interstitial occurs at 4.5, 27, and 65 °K, depending on its charge state and the mobility of the vacancy at 90 °K, and to identify the defect associated with the 35 °K stage as a vacancy‐interstitial pair where the interstitial is a donor impurity (annealing through the interstitial mobility). This interstitial mobility, strongly dependent on the charge state, explains radiation annealing and the behaviour of irradiated p‐type Germanium.