The authors present a novel, fully integrated magnetic field sensor made in the standard, polysilicon-gate CMOS technology. The circuit shows a sensitivity of 1.2 V/T with 10 V supply voltage and 100 /spl mu/A current consumption. The circuit consists of a pair of split-drain MOS transistors in a CMOS-differential amplifier-like configuration.
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Popović et al. (1983) studied this question.
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