Composite free layer for high density magnetic random access memory with lower spin transfer current

A magnetic tunnel junction (MTJ) structure with a composite free layer consisting of a nanocurrent-channel (NCC) layer sandwiched by two CoFe layers was proposed and investigated. The NCC layer increased the local spin current density inside the free layer and thus enhanced the writing capability for MTJ devices. In comparison with the conventional MTJ design with a single free layer, the intrinsic critical switching current density was reduced from 2.4×107to8.5×106A∕cm2 by using the composite free layer. On the other hand, the thermal stability factor of the composite free layer, KuV∕kBT, is around 149, which is almost the same as the value (159) for the MTJ device with a single free layer. The MTJ structure with the composite free layer is a candidate to solve the scaling problem for high density magnetic random access memory.