We report a simple silicon/Si nanocrystal superlattice/indium tin oxide structure as a photodetector, which shows a very high photosensitivity in a wide wavelength range from ultraviolet (UV) to near infrared. The fabrication of this photodetector structure is easily integrated into a standard process of Si microelectronics. The light and dark current versus voltage characteristics and photoluminescence of the photodetector show that the optical down-conversion of UV light by the superlattice layer is the main reason of the enhanced UV response.
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Yu et al. (2009) studied this question.
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