InGaAs/AlGaAs Quantum Wire DFB Buried HeteroStructure Laser Diode by One-Time Selective MOCVD on Ridge Substrate

A quasi-buried heterostructure (BH) quantum wire (QWR)-distributed feedback (DFB) laser was realized by one-time selective metalorganic chemical vapor deposition (MOCVD) on a ridge substrate with a submicron grating. One-time selective MOCVD led to the formation of a ridge waveguide with a BH structure and a QWR array for gain-guided DFB laser diode (LD) without additional etching or regrowth process. The threshold current is 15 mA, and the threshold current density is 850 A/cm2. A stable single longitudinal mode was preserved until 3 Ith, after which another mode emerged at a high drive current at 813.6 nm. This suggests a complex-coupled DFB-mode operation. The elimination of the regrowth step enlarges the range of material for extended wavelengths and operational temperatures.