Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN

A model of the exciton bound to stacking faults (SF) in GaN is suggested. It is shown that SFs are potential wells (depth ≈︂120 meV and width ≈︂10 Å) for electrons and potential barriers (height ≈︂60 meV and width ≈︂10 Å) for holes. The binding energy of excitons at SF found from variational calculation is 45 meV. The 364 nm line in GaN photoluminescence at 4 K is attributed to excitons bound to SFs.