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A novel negative differential resistance device is proposed and analyzed theoretically. The proposed device is a Hg1−xCdxTe-CdTe-Hg1−xCdxTe single quantum barrier heterostructure with 0.2≤x≤0.4. The anticipated negative differential resistance is a consequence of the unique properties of Hg1−xCdxTe-CdTe heterojunctions. Calculations are performed to predict the current-voltage characteristics of the proposed device. The results indicate that room-temperature negative differential resistances can be obtained over a large range of applied voltages. The high-speed capabilities associated with quantum barrier tunnel structures make the proposed device a candidate for high-frequency applications.
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Chow et al. (1986) studied this question.
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